局部应变场在非对线反铁磁膜中的影响
Freya Johnson1, Frederic Rendell-Bhatti2, Bryan D Esser3
1Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK.
Advanced materials (Deerfield Beach, Fla.)
|April 15, 2024
概括
来自非线性反铁磁体晶格缺陷的局部应变场会产生内在磁化,并影响异常的霍尔效应,这对于下一代计算至关重要. 这些发现对先进的记忆和逻辑设备的材料设计产生了影响.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 非对线反铁磁铁具有超越·诺伊曼计算的潜力,这是由于它们独特的带拓和对称性破坏性质.
- 薄膜中的小净时刻,对于域操纵至关重要,由于Dzyaloshinskii-Moriya相互作用或应变而产生的旋转倾斜.
- 来自格子缺陷的局部应变场对全球磁性质的影响仍然不太清楚.
研究的目的:
- 研究由格子缺陷引起的局部应变场对非对线反铁磁膜中的磁化和异常霍尔效应的影响.
- 了解格子不匹配和由此产生的边缘位移网络如何影响这些材料的内在物理性质.
主要方法:
- 非对线反铁磁膜的制造和表征,其格与基板不匹配的程度各不相同.
- 在电影中生成和分析边缘位移网络.
- 测量局部应变场及其与磁化和异常霍尔效应的相关性.
主要成果:
- 边缘位移网络在格子不匹配和匹配的薄膜中形成,在高度不匹配的情况下,整个厚度都有广泛的网络.
- 观察到显著的局部应变场,导致有限的内在磁化,即使在结构松的薄膜.
- 这些应变场显然影响反铁磁域状态和内在异常的霍尔效应.
结论:
- 由格子缺陷产生的局部应变场是非线性反铁磁体中磁化和异常霍尔效应的关键决定因素.
- 了解和控制这些应变场对于利用反铁磁体在集成内存和逻辑应用中至关重要.
- 这项工作为优化自旋电子设备性能提供了对缺陷工程的见解.
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