Zhiqi Chen1, Runhan Li1, Yingxi Bai1

  • 1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.

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|April 15, 2024
PubMed
概括

拓相过渡可以通过控制轨道角动量 (OAM) 在二维铁磁体中的分布来设计轨道霍尔效应 (OHE). 这一发现为先进的拓螺旋电子学和轨道电子学应用提供了新的途径.

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