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为高效的深紫外线发光二极管而设计的战略性的AlGaN兴奋剂障碍

Ziqi Zhang, Qianxi Zhou, Xu Liu

|April 15, 2024

概括

在深紫外发光二极管 (DUV-LED) 中,针对AlGaN量子屏障的一种新型的三明治式兴奋剂策略提高了性能和可靠性. 这种方法减轻了常规兴奋剂中出现的降解问题,为更高效和更耐用的DUV-LED铺平了道路.

科学领域:

材料科学材料科学材料科学
光电学是指光电子产品.
半导体物理半导体物理

背景情况:

对于深紫外线发光二极管 (DUV-LED) 的AlGaN量子屏障 (QB) 中的传统 (Si) 兴奋剂,面临着可靠性挑战.
在统一的QB结构中增加Si-doping水平可能会导致性能降低,包括更高的反向泄漏电流 (IR) 和降低的光输出功率 (LOP).

研究的目的:

在AlGaN QB中引入和验证一种类似于三明治的Si-doping计划 (未使用doped/Si-doped/undoped).
同时提高DUV-LED的光电子性能和操作可靠性.

主要方法:

使用传输电子显微镜 (TEM) 进行实验性表征.
数字模拟来分析载体分布和设备性能.
用拟议的兴奋剂结构和常规的统一兴奋剂制造和测试DUV-LED.

主要成果:

拟议的三明治式兴奋剂结构证明了多个量子井 (MQW) 内的改善接口质量.
与统一的兴奋剂相比,在MQW中观察到更均的载体分布.
采用拟议结构的DUV-LED显示出高于4%的墙体插头效率,显著降低了IR,并在应力测试后提高了LOP稳定性.

结论:

这种类似于三明治的Si-doping方案有效地解决了与DUV-LED中常规兴奋剂相关的可靠性问题.
这种兴奋剂策略为开发高效,具有成本竞争力和可靠的DUV-LED提供了有希望的途径.

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