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基于合体Inas/ZnSe核心/厚外量子点的近红外发光二极管

Hossein Roshan¹, Dongxu Zhu², Davide Piccinotti¹

¹Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

|April 16, 2024

概括

没有重金属的化 (InAs) 量子点 (QDs) 与化 (ZnSe) 可以实现高效的近红外发光二极管 (LED). 这些符合RoHS的LED显示性能与硫化物QDLED相美.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
光电学是指光电子产品.

背景情况:

没有重金属的III-V体量子点 (QD) 对光电子有前景.
化 (InAs) QDs提供了很好的近红外吸收和发射.
最近的进展在InAs QDs中实现了70%的光发光量子产量,采用了ZnSe外.

研究的目的:

使用InAs/ZnSe QDs制造和表征发光二极管 (LED).
评估这些新型LED的光电子性能和排放特性.
为了证明INAs QDs的可持续和高效的合成路线.

主要方法:

InAs/ZnSe量子点发光二极管 (LED) 的制造.
描述LED性能,包括外部量子效率 (EQE),开启电压和辐射.
对排放强度与电流密度的分析,以评估动态范围和被动化效应.
使用非 pyrophoric 前体, tris ((dimethylamino) -arsine 的 InAs QDs 的合成.

主要成果:

制造的InAs/ZnSe QD LED实现了13.3%的EQE,1.5V的启动电压,以及12 Wsr-1m-2的最大辐射.
LED 显示出广泛的发射动态范围,强度与电流密度之间有线性相关性.
性能可与最先进的硫化 (PbS) QD LED 相提并论.
厚厚的ZnSe外提供了高效的被动化,有助于观察到的性能.

结论:

无重金属的InAs/ZnSe QD LED在近红外频谱中提供了具有竞争力的光电子性能.
开发的合成途径具有成本效益,安全性和环保性 (RoHS).
这些发现将InAs/ZnSe QD定位为下一代光电子设备的可行替代品.

关键词:

核心/外:一个核心/外.在AsAs中.发光二极管是一种发光二极管.接近红外线的近红外线量子点就是量子点.限制符合危险物质 (RoHS) 的限制.

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