纠正ZnO-Na/ZnO-Al气凝的 p-n 均连接
Karla N Mukai1,2, Joseane C Bernardes1,3, Daliana Müller1,3
1Department of Electrical and Electronic Engineering, Federal University of Santa Catarina, Florianópolis, 88040-900 Brazil.
这项研究合成了半导体氧化 (ZnO) 气凝,添加了 (Al) 或 (Na). 由此产生的ZnO-Al/ZnO-Na连接表现出二极管整形行为,表明电子应用的潜力.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 固态物理 固态物理
背景情况:
- 氧化 (ZnO) 是一种通用的半导体,在电子领域有应用.
- 气凝具有独特的多孔结构,有利于材料特性.
- 兴奋剂是调整半导体特性的一个关键方法.
研究的目的:
- 合成Al-化 (n型) 和Na-化 (p型) ZnO气凝.
- 为了研究这些化ZnO气凝的结构和电子特性.
- 为了制造和描述基于ZnO的p-n同质连接.
主要方法:
- 具有不同度的Al或Na的ZnO气凝的sol-gel合成.
- 在500°C的超临界CO2干燥和化.
- 在ITO涂层玻璃基板上滴滴造化ZnO气凝.
主要成果:
- 合成的多孔ZnO气凝,具有六角形和血小板形状的颗粒.
- 胺兴奋剂显著减少了带隙,并增加了ZnO气凝的表面积.
- 制造的ZnO-Na/ZnO-Al p-n同质连接显示了特有的二极管整形行为.
结论:
- 可以成功地合成Al-doped和Na-doped ZnO气凝.
- 兴奋剂有效地改变了ZnO气凝的电子和结构性质.
- 制造的ZnO同位连接显示出用于二极管应用的潜力.
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