对Czochralski晶体生长的氧气运输现象的调整
Amir Reza Ansari Dezfoli1, Zary Adabavazeh1
1Department of Intelligent Automation Engineering, National Chin-Yi University of Technology, Taichung, Taiwan.
Heliyon
|April 17, 2024
概括
的旋转会影响生长过程中晶体中的氧气水平. 这项研究改进了Czochralski (CZ) 拉杆中的氧度计算,以提高晶片的质量.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体制造业 半导体制造业
- 晶体的成长 晶体的成长
背景情况:
- 氧是晶体生长中的关键杂质,显著影响晶圆的特性.
- 控制氧气度对于生产用于电子应用的高质量晶片至关重要.
研究的目的:
- 研究Czochralski (CZ) 晶体生长过程中从石英中排放到融中的氧气排放的调节.
- 分析器角速度和-器界面摩擦对氧气度的影响.
- 为了提高CZ过程中氧气度计算的准确性.
主要方法:
- 在CZ拉机中,对热传输,流体流动和杂质传输的三维过渡调节方程进行数值模拟.
- 修改氧溶解方程,以提高预测氧度的准确性.
- 实验验证使用福里埃变换红外光谱法 (FTIR) 进行实验验证.
主要成果:
- 的角速度被发现直接影响壁附近的氧气度,随后在金块中.
- 修改后的氧溶解方程提供了更准确的氧气动态预测.
- 数字模拟通过实验FTIR测量得到证实.
结论:
- 旋转是控制晶体中氧气杂质水平的一个关键参数.
- 改进后的模型提供了对CZ晶体生长中的氧气运输机制的更全面的理解.
- 改善氧气控制导致晶片的更好的机械和电气性能.
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