相关实验视频

Updated: May 11, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.2K

在新型GaAs/(In,Ga) As/GaAs核心纳米线的制造过程中进行曲和反曲,这些纳米线由in situX射线衍射监测

Ali Al Hassan1, Mahmoud AlHumaidi1,2, Jochen Kalt1,2

  • 1Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany.

Nanotechnology
|April 17, 2024
PubMed
概括

研究人员通过控制外应变来开发了直径辐射纳米线异构结构,克服了用于先进电子产品的半导体制造中的曲问题.

关键词:
曲和反向曲可以进行.能量分散式X射线光谱学在现场进行X射线衍射.分子光束的表达式是epitaxy.辐射纳米线异构结构 辐射纳米线异构结构

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Analysis of Contact Interfaces for Single GaN Nanowire Devices11:13

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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