在无序系统中对Lifshitz尾巴的波动修正
Enrique Rozas Garcia1, Johannes Hofmann1,2
1Department of Physics, Gothenburg University, 41296 Gothenburg, Sweden.
Physical review. E
|April 18, 2024
概括
无序的半导体表现出局部化的电子状态,在它们的状态密度中形成一个普遍的Lifshitz尾巴. 本研究使用先进的理论方法为该尾部提供了分析和数值结果,包括其波动前因子.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
背景情况:
- 半导体中灭的障碍会在频带边缘附近产生局部电子状态.
- 这些状态导致状态密度的指数式尾巴.
- 对于高杂质密度,这种尾巴遵循由潜在波动驱动的通用Lifshitz形式.
研究的目的:
- 在抛物线导电带中获得Lifshitz尾的分析表达式和数值.
- 为了确定Lifshitz尾巴的确切波动前因子.
- 在二维系统中为障碍带尾提供修订后的结果.
主要方法:
- 利用复制场的整体方法来分析电子状态.
- 确定了Lifshitz尾巴的指数级扩展的主要实例形状.
- 采用了Gel'fand-Yaglom形式主义来计算波动运算子的决定数,避免了全谱计算.
主要成果:
- 衍生了Lifshitz尾巴的分析表达式,包括其确切的波动前因子.
- 在抛物线导电带中获得了Lifshitz尾部的数值.
- 提出了对两个维度的障碍带尾的修订计算.
结论:
- 这项研究成功地描述了 Lifshitz 尾在无序半导体中的特征.
- 复制场积分和Gel'fand-Yaglom形式主义为分析障碍效应提供了一个强大的框架.
- 这些发现提供了更精确的理解电子状态在带边在无序的材料.
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