在具有附着障碍的可逆子单层增长中,岛屿密度的缩放
Oliver Smirnov1,2, Jacques G Amar1
1Department of Physics & Astronomy, University of Toledo, Toledo, Ohio 43606, USA.
Physical review. E
|April 18, 2024
概括
附着障碍物显著增加薄膜生长中的指数 χ,影响岛屿密度. 这项研究验证了对关键岛屿大小i=1的理论预测,并探索了i>1的情况,揭示了复杂的屏障效应.
科学领域:
- * 表面科学和材料科学,专注于薄膜生长动态.
背景情况:
- * 岛屿核和生长是薄膜形成的基本过程.
- * 指数 χ 量化了和岛密度和单体扩散/沉积率之间的关系.
- *现有的理论预测基于附着障碍的不同 χ 值,特别是不可逆转 (i=1) 与可逆转 (i>1) 的增长.
研究的目的:
- * 调查粘附障碍对薄膜生长中的指数 χ 的影响.
- * 测试不可逆和可逆增长场景的理论预测.
- * 探索 χ 对单体扩散与沉积速率比率 (Dh/F) 和屏障强度的依赖.
主要方法:
- * 开发和应用一个平均场自一致率方程 (RE) 方法.
- * 对关键岛屿大小i=1,2,3和6进行薄膜生长的模拟.
- *分析"无核化障碍"和"核化障碍"的情况.
主要成果:
- * 附着屏障在所有研究的关键岛屿大小中始终增加了 χ 的有效值.
- *对于i=1 (不可逆转的增长),结果与强屏障理论预测一致,有或没有核化屏障.
- *对于i>1 (可逆增长),在核化屏障的情况下, χ显著更高;在这种情况下,非对称分析证实了强屏障预测.
结论:
- * 附着障碍在薄膜生长过程中在确定指数 χ 时起着至关重要的作用.
- *核化屏障的存在对可逆生长 (i>1) 特别重要,导致 χ 值更高.
- *开发的RE方法为 χ提供了准确的预测,特别是在强阻隔条件下.
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