Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Field Effect Transistor01:29

Field Effect Transistor

399
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
399
Biasing of FET01:22

Biasing of FET

268
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
268
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

333
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
333
MOSFET01:16

MOSFET

467
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
467
Characteristics of MOSFET01:17

Characteristics of MOSFET

373
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
373

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Landau-Zener Transition Enhanced Quantum Sensing in Spin Defects of Hexagonal Boron Nitride.

ACS nano·2026
Same author

Lessons fromα-RuCl<sub>3</sub>for pursuing quantum spin liquid physics in atomically thin materials.

Journal of physics. Condensed matter : an Institute of Physics journal·2026
Same author

Gate-tunable giant negative magnetoresistance in tellurene driven by quantum geometry.

Nature communications·2026
Same author

Subterahertz Spin Relaxation Dynamics of Boron-Vacancy Centers in Hexagonal Boron Nitride.

Nano letters·2026
Same author

In Situ Converted High-Loading Membranes With Molecularly Dispersed Porous Organic Cages for Superior CO<sub>2</sub>/N<sub>2</sub> Separation.

Angewandte Chemie (International ed. in English)·2026
Same author

<i>In Situ</i> Study of the Ferroelectric-Antiferroelectric Phase Transition in Hf<sub>1-<i>x</i></sub>Zr<sub><i>x</i></sub>O<sub>2</sub> at Elevated Temperatures up to 600 °C.

Nano letters·2026
Same journal

Higher-Order Clustering of Receptors Real-Time Projected by Plasmon-ruler on the Single Live Cell.

Nano letters·2026
Same journal

Achieving Fermi-Level Depinning and Ideal Metal Contact in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Devices via MXene Integration.

Nano letters·2026
Same journal

AI-Assisted Electron Microscopy in Structure-Performance Analysis of Advanced Catalysts: From Atomic Resolution to Statistical Significance.

Nano letters·2026
Same journal

Electrically Switchable Ultraslow Dispersionless Polaritons via Twist Engineering in van der Waals Heterostructures.

Nano letters·2026
Same journal

Correction to "Ultrasonication-Triggered Ubiquitous Assembly of Magnetic Janus Amphiphilic Nanoparticles in Cancer Theranostic Applications".

Nano letters·2026
Same journal

Tunable Proximity Valley Splitting Via Interfacial Exchange Pinning in WSe<sub>2</sub>-CrBr<sub>3</sub>-CrPS<sub>4</sub> Heterostructures.

Nano letters·2026
查看所有相关文章

相关实验视频

Updated: Jun 28, 2025

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

7.7K

光学门的静电场效应热晶体管

Shouyuan Huang1,2, Neil Ghosh1,2, Chang Niu2,3

  • 1School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, United States.

Nano letters
|April 19, 2024
PubMed
概括
此摘要是机器生成的。

研究人员开发了一种新的热晶体管,使用拓绝缘体来控制热流. 这种通过光学关开关的设备,显示了电子产品先进热管理的巨大潜力.

关键词:
电静电门的封闭方式热开关是一个热开关.热晶体管是一种热晶体管.拓绝缘体的拓绝缘体是一个

更多相关视频

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K
Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.0K

相关实验视频

Last Updated: Jun 28, 2025

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

7.7K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K
Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.0K

科学领域:

  • 固态物理 固态物理
  • 材料科学是一种材料科学.
  • 纳米技术纳米技术

背景情况:

  • 热传输的动态控制对于先进的电子设备至关重要.
  • 拓绝缘器 (TI) 为操纵热流提供了独特的特性.
  • 开发高效的热开关是一个持续的研究挑战.

研究的目的:

  • 为了展示使用拓绝缘体表面状态的功能热晶体管.
  • 为了研究调节热导率的光学门机制.
  • 为了评估热晶体管的性能指标,包括ON/OFF比率和开关速度.

主要方法:

  • 整合拓绝缘膜与介电层的装置的制造.
  • 在介电层上应用光学门以调节热传输.
  • 微拉曼温度计用于精确测量导热率.
  • 在室温下描述设备的热切换行为.

主要成果:

  • 一个具有2.8的大型开/关比的热晶体管在室温下成功演示.
  • 该设备表现出连续和可重复的切换功能.
  • 观察到的切换时间在几十秒的范围内,采用光学关,有可能更快的电气关.

结论:

  • 拓绝缘体表面状态可以有效地用于创建可调节的热传输设备.
  • 光学门为这些设备中的动态热管理提供了一种可行的方法.
  • 展示的热晶体管对未来电子系统中主动热管理和控制中的应用有希望.