在重离子辐射WSe2 memtransistor中的光电子反应上,施托基屏障降低
Shengxia Zhang1,2, Lijun Xu1, Shifan Gao1,3
1Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou, 730000, P. R. China. zhangsx@impcas.ac.cn.
Nanoscale
|April 22, 2024
概括
tungsten diselenide memtransistors 的快速重离子辐射产生了缺陷,为航空航天应用提供了新的功能. 这些改造的设备显示了神经形态计算中先进的光电子人工突触的前景.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 像WSe2这样的二维过渡金属二甲基化物 (TMD) 对先进的电子设备至关重要.
- 基于TMD的memtransistors为航空航天应用提供模拟,传感和存储.
- 快速重离子 (SHI) 辐射用于模拟太空辐射对电子产品的影响.
研究的目的:
- 调查SHI辐射对基于WSe2的孟晶体管的影响.
- 探索由此产生的缺陷及其对设备性能的影响.
- 评估航空航天辐射应用和神经形态计算的潜力.
主要方法:
- 在各种条件下利用SHI辐射技术,诱导WSe2内电晶体管的缺陷.
- 分析了照射设备的电气和光电子特性.
- 描述了创建的缺陷类型,包括无形结构,1T阶段和空缺.
主要成果:
- 在轻光照明下实现低阻力状态到低阻力状态 (LRS-LRS) 的切换行为.
- 观察到不同尖峰列车的光电流响应,表明丰富的模拟功能.
- 证实,由于缺陷,金属/WSe2接口的Schottky屏障高度降低是观察到的行为的主要原因.
- 确定了像1T阶段和WSe2通道中空缺等影响运输属性的复杂缺陷.
结论:
- SHI辐射有效地修改了WSe2晶体管,产生了复杂的缺陷,增强了设备的功能.
- 该研究为在航空航天辐射环境中使用这些修改设备提供了基础.
- 这项工作为重离子辐射开辟了新的途径,用于开发基于memtransistor的光电子人工突触,用于神经形态计算.
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