在范德瓦尔斯Fe3GaTe2中的厚度和磁场依赖磁域演变
Shuaizhao Jin1, Yiting Wang2,3, Haotian Zheng4
1School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China.
Nano letters
|April 22, 2024
概括
在范德瓦尔斯Fe3GaTe2.2中直接观察到室温 skyrmions. 薄片厚度和磁场影响斯基米翁的形成,为新型的自旋电子应用铺平了道路.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
背景情况:
- 范德瓦尔斯 (vdW) 材料中的室温铁磁性是自旋电子学的一个关键领域.
- 在Fe3GaTe2的拓霍尔效应表明潜在的室温 skyrmions,但缺乏直接观察.
研究的目的:
- 使用实时空间成像直接观察和描述Fe3GaTe2中的室温 skyrmions.
- 为了研究薄片厚度和磁场冷却对磁域结构和 skyrmion 形成的影响.
主要方法:
- 使用实时空间成像技术可视化磁域演变.
- 在场冷却过程中对不同厚度的薄片和外部磁场条件进行了系统研究.
主要成果:
- 在室温下在Fe3GaTe2.2中成功制造和观察了Néel类型的 skyrmions.
- 发现,由于竞争的磁性异构和双极相互作用,片厚度显著影响了 skyrmion 密度.
- 在不同的磁场条件下,迷宫领域和 skyrmion 格子的形成是特征性的.
结论:
- 已证实Fe3GaTe2可以容纳各种大小的室温 skyrmions.
- 这些发现突显了磁拓纹理在VDW材料中的可调性.
- 这项研究为探索和利用室温磁现象在自旋电子设备中的新可能性打开了大门.
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