在memristors中的歇斯底里产生导电感应和导电电容效应
Juan Bisquert1, Juan B Roldán2, Enrique Miranda3
1Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain. bisquert@uji.es.
Physical chemistry chemical physics : PCCP
|April 24, 2024
概括
由于导电量调制,记忆器表现出动态的电感器和电容器行为. 这些内在特性源于延迟导电过程,而不是电磁效应,解释了电子设备中的歇斯底里.
科学领域:
- 固态物理 固态物理
- 材料科学是一种材料科学.
- 电气工程 电气工程 电气工程
背景情况:
- 记忆电阻器通过电压扫描来切换电导状态 (高/低).
- 在具有电导度调制的系统中,如memristors,太阳能电池和晶体管中,歇斯底里是常见的.
- 这种歇斯底里是由化学感应机制和延迟导电引起的.
研究的目的:
- 用交流阻抗光谱学研究memristors的内在动态行为.
- 为了确定hysteresis的起源在memristive设备和相关系统.
- 为了建模从电容到感应阻抗光谱的过渡.
主要方法:
- 采用了小信号交流阻抗光谱.
- 分析的重点是由于导电量调制而表现出歇斯底里的系统.
- 一个简单的memristor模型被用于模拟.
主要成果:
- 记忆电阻器和类似系统在特定电压范围内表现出类似于电感器和电容器的动态行为.
- 这些行为源于延迟导电过程,而不是电磁或极化效应.
- 该研究观察到从电容到感应阻抗光谱的过渡,解释了非零电流-电压曲线交叉.
结论:
- 观察到的感应性和电容性行为是memristors和导电调制系统的内在动态特性.
- 延迟导电是这些动态效应和由此产生的hysteresis背后的基本机制.
- 这些发现为memristor动态及其阻抗特性提供了新的理解.
相关概念视频
01:25MOS Capacitor
771
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
771
01:24Metal-Semiconductor Junctions
347
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
347
01:31Ferromagnetism
2.4K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.4K
01:17Characteristics of MOSFET
372
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
372
01:20Design Example: Capacitance Multiplier Circuit
771
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
771
01:30RLC Series Circuits
3.0K
An RLC series circuit comprises an inductor, a resistor, and a charged capacitor connected in series. When the circuit is closed, the capacitor begins to discharge through the resistor and inductor by transferring energy from the electric field to the magnetic field. Here, the resistor connected to the circuit causes energy losses; therefore, on the complete discharge of the capacitor, the magnetic field energy acquired by the inductor is less than the original electric field energy of the...
3.0K