单层MoS2的金属兴奋剂用于p型晶体管和高速光晶体管

Dan Xu1, Pengcheng Jian1, Weijie Liu1

  • 1Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China.

概括

用添加的二硫化物 (V-doped MoS) 片被选择性地使用化学蒸汽沉积来生长. 这种兴奋剂增强了电气性能,使先进电子设备的光电晶体管更快.

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