无电场旋转轨道扭矩磁化 切换在垂直磁化半导体 (Ga,Mn) 中作为单层
Miao Jiang1,2, Xinyuan Yang3, Shengyuan Qu1
1School of Materials Science and Engineering, Beijing Institute of Technology, Haidian, Beijing 100081, P. R. China.
在单个 (Ga,Mn) As 层中使用旋转轨道扭矩 (SOT) 实现了无磁场磁化切换. 这一突破消除了对外部磁场的需求,为更可扩展的SOT-MRAM设备铺平了道路.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 电流诱导的旋转轨道扭矩 (SOT) 能够在低电流密度下进行磁化切换.
- 传统的SOT需要外部磁场来打破对称性并确保确定性切换.
- 无场SOT开关对于高密度集成和SOT-MRAM的实际应用至关重要.
研究的目的:
- 为了实现无磁场的SOT磁化,在铁磁单层中切换.
- 调查 (Ga,Mn) As作为SOT应用中的自旋轨道铁磁体的潜力.
- 在单层系统中阐明底层SOT切换机制.
主要方法:
- 使用旋转轨道扭矩在 (Ga,Mn) 作为单层.
- 通过不均的Mn分布和基板倾斜来设计倾斜的异质性.
- 研究了没有外部磁场的磁化切换.
主要成果:
- 成功演示了在 (Ga,Mn) As单层中的无磁场SOT磁化切换.
- 通过利用强大的旋转轨道合和倾斜的异形性来实现切换.
- 在没有应用任何外部磁场的情况下观察到切换.
结论:
- 在 (Ga,Mn) As.As.等单层自旋轨道铁磁体中可以实现无场SOT切换.
- 由材料属性产生的内部场可以驱动确定性切换.
- 这项工作推动了高效和可扩展的SOT-MRAM技术的发展.
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