在Pt/Co/Ti结构中切换颗粒状磁化,用于内存计算应用的HfOx插入.
Tianli Jin1, Bo Zhang1,2, Funan Tan1
1School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
Nano letters
|April 25, 2024
概括
这项研究引入了一种新的HfOx层,以提高磁器件的旋转轨道扭矩 (SOT) 效率. 这一创新能够实现高效的多状态存储和人工神经网络 (ANN) 应用.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 电气工程 电气工程
背景情况:
- 内存计算依赖于利用多个状态的域墙 (DW) 位置的设备.
- 旋转轨道扭矩 (SOT) 是驱动DW运动的关键,但高效的DW固定至关重要.
- 传统设备在SOT效率和开关电流密度方面存在局限性.
研究的目的:
- 开发一种新的设备结构,用于在磁性内存应用中高效地操纵DW.
- 研究HfOx插入层对SOT效率和开关机制的影响.
- 展示新设备在多状态存储和人工神经网络 (ANN) 的潜力.
主要方法:
- 在Pt/Co/Ti结构中,在Co/Ti接口内嵌入一个HfOx插入层.
- 磁化开关,SOT效率和开关电流密度的实验性表征.
- 使用脉冲电流进行稳定的多态存储和突触可塑性的设备测试.
- 使用开发的设备对人工神经网络 (ANN) 的模拟.
主要成果:
- 通过从DW运动过渡到DW核化实现了颗粒磁化切换.
- 与传统结构相比,证明了提高SOT效率和降低开关电流密度.
- 在Pt/Co/HfOx/Ti装置中实现了稳定的多态存储和突触可塑性.
- 在数字识别任务中,ANN模拟实现了91%的准确率.
结论:
- 该Pt/Co/HfOx/Ti装置可实现高效的DW核化,克服了基于运动的DW装置的局限性.
- HfOx插入层显著提高了SOT的效率,并降低了功耗.
- 开发的设备显示了先进的多状态存储和实际ANN应用的巨大潜力.
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