旋转障碍干预避免了B20立方Mn1-xVxSi中的量子关键性
Parul Khandelwal1, S Shanmukharao Samatham2, P D Babu3
1Magnetic Materials Laboratory, Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai 400 076, India.
概括
将 (V) 替换为酸 (MnSi) 抑制了磁性秩序和漫游性质,导致旋转玻璃行为和改变量子相位过渡. 这项研究将这些磁变化映射到MnSi相位图中.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 磁力学 磁力学 是一种
背景情况:
- 氧化 (MnSi) 是一种具有复杂磁性特性的巡回磁性材料.
- 了解化学替代的影响对于调整材料中的磁性行为至关重要.
研究的目的:
- 研究将过渡金属 (V) 替换成MnSi的效应.
- 探索磁性顺序,流动性和相位过渡的结果变化.
- 为了构建Mn1-xVxSi.Si的度-温度 (x-T) 阶段图.
主要方法:
- 合成不同V度的Mn1-xVxSi化合物 (x = 0-0.1).
- 使用直流 (dc) 和交流电 (ac) 灵敏度进行表征.
- 分析晶体结构和单元细胞体积.
主要成果:
- 晶体结构没有改变,但通过V替代增加了单元细胞体积.
- 抑制远程磁性秩序,削弱漫游性质.
- 对于x ≥0.1出现了自旋玻璃行为,干扰了量子相位过渡.
- 在磁性排序组合中 (0 < x ≤ 0.05) 识别一种有利于自旋纹理的前体状态.
结论:
- 替代导致MnSi的磁性特性发生显著变化.
- 构建的x-T相图显示了替代诱导的磁性变化.
- 这些发现突出了前体状态在旋转纹理形成中的作用.
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