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Updated: Jun 27, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
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Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

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原子层沉积的单临床二氧化薄膜的增长通过锡氧化物剂稳定DRAM电容电极应用的电容电极应用

Jae Hyeon Lee1, Wangu Kang1, Jeong Eun Shin1

  • 1Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea.

ACS applied materials & interfaces
|April 26, 2024
PubMed
概括

这项研究引入了用Sn合的二氧化 (TMO) 薄膜作为优越的DRAM电容电极,克服了传统TiN的局限性. 新的原子层沉积方法稳定了MoO2,从而提高了设备的性能.

关键词:
原子层沉积的原子层沉积.电容器电极是电容器的电极.动态随机访问存储器 (DRAM)二氧化是二氧化中的一种.锡氧化物兴奋剂的使用

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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