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在多量子井LED中利用III-化物内置场

Mikołaj Chlipała¹, Henryk Turski^1,2

¹Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland.

ACS applied materials & interfaces

|April 26, 2024

概括

在研究化 (GaN) 发光二极管 (LED) 时,本研究比较了"p-up"和"p-down"配置. "P-down"LED显示了由QW接口限制的改善载波传输,并实现更低的开启电压.

科学领域:

半导体物理半导体物理
材料科学是一种材料科学.
光电学是指光电子产品.

背景情况:

III-化物材料,如化 (GaN),对于发光设备至关重要.
在III-化物中,石晶体结构会引起显著的极化场.
这些场,加上高受体电离能,阻碍了量子井 (QW) LED 中的载体注入和分布.

研究的目的:

为了研究和比较Ga-极点LED中的载波分布.
分析两个配置:标准的"p-up"和反向的"p-down",使用底部道交叉点.
了解反向层序列对载体运输和设备性能的影响.

主要方法:

在"p-up"和"p-down"配置的Ga-极点LED的制造和特征.
使用底部道交叉点来逆转p和n层的序列.
采用彩色编码的交替量子井 (QWs) 来探测载体分布.

主要成果:

在"p-down"LED中,载体运输受到QW接口的潜在障碍所限制.
相比之下,孔的移动性被认为是"p-up"结构中载体运输的瓶.
"P-down"的LED配置显示了显著降低的开启电压.

结论:

"p-down"配置提供了一种有效的策略,以减轻III-化物LED中的载体运输问题.
倒置结构可以克服与固有的极化场相关的局限性.
在"p-down"LED中观察到的低开启电压表明了提高设备效率的潜力.

关键词:

在 GaN GaN 中.在InGaN量子井中.在LEDLEDLEDLED中,我们可以看到LED.这就是PA-MBE.标志性表达力 (Epitaxy) 是一种表达力.多个 QW 的 QW.化物半导体半导体

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