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Updated: Jun 27, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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MnO/ZnO:Zn 薄膜频率适应异构结构,用于未来可持续的记忆系统

Karen A Neri-Espinoza1, José A Andraca-Adame1, Miguel A Domínguez-Crespo1

  • 1Department of Nanomaterials, Unidad Profesional Interdisciplinaria de Ingeniería Campus Hidalgo (UPIIH), Instituto Politécnico Nacional (IPN), Hidalgo 42162, Mexico.

Nanomaterials (Basel, Switzerland)
|April 26, 2024
PubMed
概括

这项研究引入了一种新的MnO/ZnO:Zn异构结构,用于频率自适应电子信号处理. 该设备表现出快速切换速度和稳定的记忆行为,为可持续的电子产品铺平了道路.

关键词:
IV 曲线的曲线.这就是MnO MnO.ZnO:Znn 是一种氧化物.适应式电子学适应式电子学纪念馆是为了纪念.可持续的电子产品可持续的电子产品

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MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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