激光诱导的超快旋转注入全半导体磁性CRI3/WSe2异质活体中

Yilv Guo1,2, Yehui Zhang1, Qing Long Liu2

  • 1Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, People's Republic of China.

ACS nano
|April 26, 2024
PubMed
概括

对于量子计算而言,高效的旋转注入是使用磁性CRI3层和WSe2.2层实现的. 观察到在五秒时间尺度上的超快自旋动力学,使得在分层半导体中快速自旋操纵成为可能.