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Updated: Jun 27, 2025

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分析浮式门场效应晶体管的各种结构和温度特性,适用于细粒度逻辑内存设备

Sangki Cho1, Sueyeon Kim2, Myounggon Kang3

  • 1Department of Electrical and Electronics Engineering, Konkuk University, Seoul 05029, Republic of Korea.

Micromachines
|April 27, 2024
PubMed
概括

浮式门场效应晶体管 (FGFET) 为逻辑内存 (LiM) 计算提供了一个CMOS兼容的解决方案. 分析证实它们适用于LiM应用,显示三元内容可定位存储器和完整的添加器电路的温度依赖特性.

关键词:
浮式门场效应晶体管 (FGFET) 浮式门场效应晶体管完整的添加器 (FA)在内存中的逻辑 (LiM)神经网络的神经网络的神经网络温度的温度的温度的温度的温度三元内容可定位存储器 (TCAM)·诺伊曼瓶 - ·诺伊曼瓶是一个瓶.

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