相关实验视频

Updated: Jun 27, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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一个新型不对称的沟SiC金属氧化物半导体场效应晶体管与多Si/SiC异质连接二极管,以优化反导性能

Yiren Yu1, Zijun Cheng1, Yi Hu1

  • 1School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400030, China.

Micromachines
|April 27, 2024
PubMed
概括

一个新的碳化MOSFET设计与一个Poly-Si/SiC异质连接二极管 (HJD-ATMOS) 显著改善反向导和开关性能. 这种创新的结构降低了切断电压和开关损失,同时保持了故障电压.

关键词:
不对称的沟 MOSFET异质连接异质连接低切入电压的低切入电压碳化是碳化的重要组成部分.切换损失的切换损失

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Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
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