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基于InP HBT过程的频率分离器电路单事件效应研究和硬化分析

Xiaohong Zhao¹, Yongbo Su², You Chen¹

¹School of Aviation Engineering, Air Force Engineering University, Xi'an 710051, China.

|April 27, 2024

概括

这项研究使用InP HBTs模拟频率分割器中的单一事件效应. 一种新的硬化方法通过减轻交叉合和反回路问题,显著提高了辐射耐受性.

科学领域:

电子电子电子电子电子电子电子
辐射物理辐射物理
半导体设备半导体设备

背景情况:

单一事件效应 (SEE) 对电子电路构成风险,特别是在频分隔器等敏感元件中.
酸异质连接双极晶体管 (InP HBT) 易受辐射诱导的短暂电流的影响.
了解SEE机制对于开发耐辐射电子系统至关重要.

研究的目的:

为了研究频率分隔器电路中的单一事件效应 (SEE).
开发和验证一个过渡电流模型,用于在辐射下敏感的InP HBTs.
提出和评估一种有效的硬化方法,以提高辐射耐受性.

主要方法:

在InP HBTs中SEE的实验性表征.
考虑激光能量,结电压和辐射位置的过渡电流模型的开发.
使用过渡电流模型模拟 (2:1) 静态频率分离器电路.
在相对于时钟信号的不同激光脉冲定时下分析电路行为.

主要成果:

为InP HBTs建立了一个短流模型,考虑了关键影响因素.
模拟显示,未化分隔器中的交叉合效应和反循环会导致显著的逻辑干扰.
拟议的硬化方法,包括冗余,有效地减轻了SEE的影响.
频分区电路的辐射耐受性在硬化后显著改善.

结论:

开发的短暂电流模型准确地预测了基于InP HBT的频率分割器中的SEE.
不硬化电路易受逻辑扰乱的影响,原因是SEE引发的内部反机制.
建议的冗余硬化策略有效地提高了频分隔器的辐射耐受性.

关键词:

InP异极连接双极晶体管的双极晶体管.分隔器电路的分隔器.哈登电路的情况一个单一事件的效应.

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