超宽带变压器反单立式微波集成电路功率放大器设计在0.25微米的GaN过程中
Jialin Luo1,2, Yihui Fan1,2, Jing Wan1,3
1Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
Micromachines
|April 27, 2024
概括
本研究介绍了一种超宽带功率放大器 (PA),在化 (GaN) MMIC 工艺中使用变压器反 (TFB). 它在芯片变压器匹配网络中实现了创纪录的117%的相对带宽.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
背景情况:
- 单立式微波集成电路 (MMIC) 对于高频应用至关重要.
- 在MMIC功率放大器 (PA) 中实现超宽带性能存在重大设计挑战.
- 化 (GaN) 技术为射频应用提供高功率密度和效率.
研究的目的:
- 设计和演示使用变压器反 (TFB) 的超宽带 (UWB) 功率放大器 (PA).
- 为了利用0.25μm化 (GaN) 工艺提高性能.
- 为了实现 PA 具有芯片内变压器匹配网络的最大带宽.
主要方法:
- 采用排水到门变压器反 (TFB) 技术来扩大运行带宽.
- 使用0.25μm化 (GaN) 工艺进行MMIC制造.
- 设计并集成了一个芯片上的变压器匹配网络.
主要成果:
- 实现了117%的相对-3dB带宽,覆盖5.4GHz到20.3GHz.
- 在28V电源下提供25.5dBm的输出功率.
- 在6-19 GHz范围内获得了14 dB的小信号增益,平度小于0.78 dB.
- 该PA芯片的大小为1.571mm2.
结论:
- 本文介绍了第一个在复合半导体MMIC过程中具有芯片变压器反的功率放大器.
- 开发的TFB MMIC PA为芯片上的变压器匹配提供了迄今为止最广泛的带宽性能.
- 基于GaN的UWB PA在高频集成电路设计方面取得了重大进展.
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