您也可能阅读
通过共同作者、期刊和引用图与本文相关的文章。
Bowen Ren1,2, Lan Chen1, Rong Chen1
1The EDA Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.
化学机械抛光 (CMP) 面临着影响芯片厚度的模式效应的挑战. 这项研究引入了密度校正和线路接触变形配置文件,以增强CMP预测模型,显著提高准确性.
13:44Detection of Architectural Distortion in Prior Mammograms via Analysis of Oriented Patterns
Published on: August 30, 2013
09:16Author Spotlight: Optimization of Processing Technology for Tiebangchui with Zanba Based on CRITIC Combined with Box-Behnken Response Surface Method
Published on: May 12, 2023
科学领域:
背景情况:
研究的目的:
主要方法:
主要成果:
结论: