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Updated: Jun 27, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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在2O3中超薄的亚-5nm晶体管用于高性能和低功耗电子应用

Linqiang Xu1,2, Lianqiang Xu3, Jun Lan4

  • 1State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China.

ACS applied materials & interfaces
|April 27, 2024
PubMed
概括

超薄的氧化 (In2O3) 场效应晶体管 (FET) 显示出高性能和低功耗电子产品的潜力. 模拟表明这些FET可以缩放到2nm,超过其他2D半导体.

关键词:
一开始的量子运输模拟.高性能和低功耗电子产品的高性能和低功耗电子产品的低功耗电子产品.下-5 nm 门的长度.超薄的 In2O3 在2O3宽带差距 宽带差距 宽带差距

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