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Updated: Jun 27, 2025

Analysis of Contact Interfaces for Single GaN Nanowire Devices
11:13

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

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在GaInN/GaN多个量子中对有效的基于纳米线的LED进行排放平面控制的研究

Soma Inaba1, Weifang Lu2,3, Ayaka Shima1

  • 1Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan.

Nanoscale advances
|May 2, 2024
PubMed
概括

高效的微型发光二极管 (微型LED) 从核心外纳米线中受益. 优化GaInN/GaN超级晶格增长温度控制排放平面,并增强高级LED应用的光输出.

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相关概念视频

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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