记忆电磁感应对2D威尔逊神经元模型的动态效应
Quan Xu1, Kai Wang1, Yufan Shan1
1School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213159 People's Republic of China.
Cognitive neurodynamics
|May 3, 2024
概括
这项研究介绍了一种新的3D记忆威尔逊神经元模型,该模型包含了电磁感应. 硬件验证表明,这种模型可以调节神经元发射活动,为未来的研究提供了洞察力.
科学领域:
- 计算神经科学是一种神经科学.
- 神经物理学 神经物理
- 电路设计 电路设计
背景情况:
- 电磁感应显著影响生物神经元的激发.
- 流量控制的memristors可以模拟电磁感应效应.
研究的目的:
- 开发一个3D记忆威尔逊神经元模型,考虑非理想的流量控制记忆器.
- 研究电磁感应对神经元发射活动的影响.
主要方法:
- 使用一个非理想的流量控制的memristor与一个共弦值的mem-conductance函数构建了一个3Dmemristive威尔逊神经元模型.
- 执行数值模拟来分析神经元发射模式.
- 设计和测试基于PCB的模拟电路,用于硬件验证.
主要成果:
- 3D记忆威尔逊神经元模型展示了各种不同的发射活动.
- 发现了共存的发射模式,反共振性和发射频率调节.
- 硬件测量验证了模拟结果.
结论:
- 拟议的模型准确地捕捉了神经元中的电磁感应效应.
- 电磁感应可以用来调节神经元发射活动.
- 这项研究为设计具有可调节发射特性的神经电路提供了基础.
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