相关实验视频

Updated: Jun 27, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

在单门和双门装置结构的GNR-FET中,g_m/I_D和f_T之间的权衡分析

Md Akram Ahmad¹, Pankaj Kumar², Bhubon Chandra Mech³

¹Department of Electronics Engineering, Indian Institutes of Technology, Dhanbad, 826004, India. akram14407@gmail.com.

Scientific reports

|May 3, 2024

概括

双门石墨烯纳米带场效应晶体管 (GNRFET) 显示出比单门设计更好的模拟/射频性能. 这两种GNRFET类型都实现了千兆赫的切割频率,为射频应用提供了宝贵的见解.

科学领域:

• 凝聚物质物理学和材料科学.
• 先进的半导体设备物理和工程.

背景情况:

• 场效应晶体管 (FET) 对于模拟/射频应用至关重要.
• 石墨烯纳米带 (GNR) 为下一代晶体管提供独特的电子特性.
• 了解GNRFET的操作参数是设备优化的关键.

研究的目的:

• 分析和比较单门 (SG) 和双门 (DG) GNRFET 的模拟/射频操作参数.
• 评估模拟/射频性能的优点数据 (FoM),包括增益,频率和效率.
• 调查GNRFET特征对混合静态随机存取内存 (SRAM) 电路的影响.

主要方法:

• 原子 pz 轨道模型来自石墨烯纳米丝带哈密尔顿.
• 非平衡格林函数 (NEGF) 形式主义用于设备分析.
•紧密结合的哈密尔顿式与原子的pz轨道基础设置为通道特征.

主要成果:

•GD GNRFETs与SG GNRFETs相比,显示出优越的模拟/射频性能.
• 总干事和GD GNRFET都实现了千兆赫的切割频率.
• 分析提供了对模拟/射频性能和SRAM电路影响的综合性价值数据 (FoM).

结论:

• DG GNRFETs为增强模拟/射频电路设计提供了一个有希望的途径.
• 该研究提供了对模拟应用的权衡的详细见解.
• GNRFETs显示出对高性能SRAM应用的潜力.

关键词:

模拟/无线电频率模拟/无线电场效应晶体管 (FET) 是一个石墨烯纳米带 (GNR) 是一种非平衡的格林函数 (NEGF)权衡分析 (Trade-off Analysis) 是一种分析方法.

更多相关视频

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

相关概念视频

Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

Small-Signal Analysis of MOSFET Amplifiers

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...