电场和电荷密度分布的DFT辅助调查纯净和有缺陷的2D WSe2通过差分相对比成像

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Updated: May 12, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

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Maja Groll1, Julius Bürger1, Ioannis Caltzidis1

  • 1Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany.

Small (Weinheim an der Bergstrasse, Germany)
|May 4, 2024
PubMed
概括

研究人员使用分相对比 (DPC) 成像来绘制二化 (WSe2) 层中的电场图像. 这项技术揭示了原子尺度的电荷分布和缺陷冲击,为二维材料特性提供了洞察力.

关键词:
电荷密度分布的分布方式缺陷 缺陷 缺陷 缺陷 缺陷不同相位对比度 (DPC) 的差异.电场的分布电场的分布.扫描传输电子显微镜 (STEM) 的使用二化 (WSe2) 是一种二化.

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