碳化探测器的定位电荷采集器,带有经表轴生长的石墨烯层
Ivan Lopez Paz1, Philippe Godignon2, Neil Moffat2
1Instituto de Microelectronica de Barcelona, IMB-CNM-CSIC, 08193, Cerdanyola del Valles, Barcelona, Spain. ivan.lopez@imb-cnm.csic.es.
Scientific reports
|May 6, 2024
概括
碳化 (SiC) 辐射探测器与表层生长的石墨烯 (EG) 显示出有希望的电荷收集能力. 石墨烯提高了性能,为辐射检测应用提供了可行的无金属替代品.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 辐射检测 辐射检测 辐射检测
背景情况:
- 碳化 (SiC) 具有出色的物理性能,使SiC二极管适用于粒子加速器和医疗剂量计中的辐射检测.
- 减少SiC二极管上的金属接触可以在金属存在不利的特定应用中提高性能.
研究的目的:
- 为了研究在碳化物 (SiC) p-in-n辐射探测器上作为金属接触替代品的表生长的石墨烯 (EG) 的作用.
- 与传统的金属接触探测器相比,分析EG-SiC探测器的电荷采集特性和性能.
主要方法:
- 制造带有或不带有表层生长的石墨烯层的SiC p-in-n辐射探测器.
- 使用放射性源和信号集成进行电荷收集分析.
- 使用过渡电流技术 (TCT) 进行位置依赖信号形成分析.
主要成果:
- EG-SiC传感器展示了电荷采集能力,其分辨率与完全金属化传感器相当.
- TCT研究显示,EG-SiC探测器在活性区域中均地收集电荷.
- 在EG-SiC探测器中观察到高达40%的短暂振幅减噪,远低于没有金属接触的探测器中90%的减噪.
结论:
- 表面生长的石墨烯的存在有利于影响SiC辐射探测器的性能.
- 在辐射检测应用中,EG-SiC技术为传统金属接触器提供了可行的替代方案.
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