Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

567
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
567
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

252
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
252
Carrier Transport01:21

Carrier Transport

432
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
432
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

328
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
328
Schottky Barrier Diode01:27

Schottky Barrier Diode

337
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
337
Biasing of P-N Junction01:16

Biasing of P-N Junction

521
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
521

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Atomic-Level CuO<sub>x</sub>-CoO<sub>x</sub>-Pd Interfacial Engineering Enables Hierarchical Synergy for High-Efficiency ORR Pathways and Boosted Power Output in Alkaline Fuel Cells.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Modulating Solid-Solution Solubility to Enhance Thermoelectric Performance and Maintain Structural Stability in Phase-Transition Silver Chalcogenides.

Small (Weinheim an der Bergstrasse, Germany)·2025
Same author

Avoided Crossing Phonons Realizes High-Performance Single-Crystalline β-Zn<sub>4</sub>Sb<sub>3</sub> Thermoelectrics.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2024
Same author

Reducing Domain Density Enhances Conversion Efficiency in GeTe.

Small (Weinheim an der Bergstrasse, Germany)·2024
Same author

Tuning Interstitials in Fully Dense β-Zn<sub>4</sub>Sb<sub>3</sub> Doubles Single-Leg Thermoelectric Efficiency.

ACS applied materials & interfaces·2023
Same author

Substrate-Induced Anisotropic Growth of CuAlO<sub>2</sub> Platelets in a Liquid-Solid Reaction.

ACS omega·2023

相关实验视频

Updated: Jun 27, 2025

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering
04:22

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering

Published on: May 17, 2024

2.8K

在AgSbTe2中的阴子调制实现了载波优化,缺陷工程和7%的单脚热电效率.

Bo-Chia Chen1, Kuang-Kuo Wang2, Hsin-Jay Wu1

  • 1Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.

Small (Weinheim an der Bergstrasse, Germany)
|May 7, 2024
PubMed
概括
此摘要是机器生成的。

这项研究使用AgSbTe2.2中的阴离子调制来增强中温热电发生器 (TEG). 优化的Ag1.02Ge0.02Sb0.96Te2达到1.77.7的热电功率 (zT) 的峰值.

关键词:
在AgSbTe2的基础上.阴离子调制的调制.缺陷 缺陷 缺陷 缺陷 缺陷单脚装置是一种单脚装置.热电发电机热电发电机

更多相关视频

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence
12:21

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence

Published on: March 6, 2020

8.2K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K

相关实验视频

Last Updated: Jun 27, 2025

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering
04:22

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering

Published on: May 17, 2024

2.8K
Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence
12:21

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence

Published on: March 6, 2020

8.2K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K

科学领域:

  • 材料科学 材料科学 材料科学
  • 凝聚物质物理学 凝聚物质物理学
  • 固态化学 固态化学

背景情况:

  • 银抗化 (AgSbTe2) 对于中温热电发生器 (TEG) 是至关重要的.
  • 阴离子操纵是提高AgSbTe2性能的一个关键策略.
  • 优化热电特性需要平衡功率因子和导热率.

研究的目的:

  • 通过阴离子调制来增强AgSbTe2的热电性能.
  • 为了研究纳入 (Ge) 对材料性能的影响.
  • 为改进的热电设备建立结构-属性关系.

主要方法:

  • 合成非静态度和添加剂的AgSbTe2晶体.
  • 使用X射线光电谱 (XPS) 进行化学状态的表征.
  • 传输电子显微镜 (TEM) 用于结构分析 (超格子,缺陷).
  • 测量热电传输特性 (西贝克系数,电导率,热导率).

主要成果:

  • 在583K的Ag1.04Sb0.96Te2.2.中,达到1.5的热电功率 (zT) 的峰值.
  • 纳入Ge导致载体度增加 (n<0xE2><0x82><0x99>) 并通过XPS显示Ge4+,Ag+,Sb3+状态.
  • 观察到超晶格结构和TEM中的线性缺陷,降低晶格导热率 (κ<0xE2><0x82><0x97>).
  • Ag1.02Ge0.02Sb0.96Te2 在623 K.表现出1.77的峰值zT.
  • 一个单脚TEG装置实现了7%的转换效率,温度梯度为350K.

结论:

  • 阴离子调制,特别是Ge doping,有效地提高了AgSbTe2.2的热电性能.
  • 改进的zT是由于增强功率因子和降低晶格导热率的协同效应造成的.
  • 该研究证实了材料缺陷,传输特性和热电效率之间的联系.