在具有隔热介层的Co/Pb/Co异构结构中的超导自旋效应
Andrey A Kamashev1, Nadir N Garif'yanov1, Aidar A Validov1
1Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, 420029 Kazan, Russia.
Beilstein journal of nanotechnology
|May 7, 2024
概括
研究人员在//异构中观察到显著的旋效应,即使具有氧化接口. 切换磁化状态使超导过渡温度 (Tc) 变化了0.2K,挑战了之前的假设.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 超导电性 超导电性 超导电性
背景情况:
- 超导体/铁磁体 (S/F) 接近效应对于自旋电子器件至关重要.
- 旋转效应,根据磁化对齐调节临界温度 (Tc),通常通过干净的接口进行优化.
研究的目的:
- 研究具有故意氧化S/F接口的Co/Pb/Co异构结构的超导特性.
- 为了确定一个显著的旋效应可以实现,尽管非理想的接口.
主要方法:
- 制造具有受控隔热介层的Co/Pb/Co异构结构.
- 测量超导的临界温度 (Tc),作为Co层相对磁化方向的函数.
主要成果:
- 观察到一个显著的旋转效应,Tc的变化高达0.2K.
- 这种效应发生在S/F接口的故意氧化中,与常见的预期相反.
- 结果证实了F1/S/F2系统中氧化中间层的早期发现.
结论:
- 在S/F异构结构中,故意损坏的接口并不排除显著的旋效应.
- 氧化介层为优化超导旋性能提供了一个可行的替代方案.
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