在低温处理的薄膜晶体管中,电子活性无形状态的作用
Ahmad R Kirmani1, Emily F Roe1, Christopher M Stafford1
1Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899 USA.
Materials advances
|May 7, 2024
概括
氧化 (In2O3) 薄膜晶体管 (TFT) 的低温处理是灵活电子的关键. 通过平衡结晶性和无形相,sol-gel化学提供了比燃烧方法更好的电子流动性.
科学领域:
- 材料科学 材料科学 材料科学
- 电子工程 电子工程
- 纳米技术纳米技术
背景情况:
- 金属氧化物 (MO) 薄膜晶体管 (TFT) 对于低成本,灵活和打印电子产品至关重要,因为它们的电荷传输特性和低温处理能力.
- 在低温处理的MO TFT中实现充电载体足够的移动性,与塑料基板相容,仍然是一个重大挑战.
研究的目的:
- 调查加工条件,薄膜结构和叶片涂层的氧化 (In2O3) 薄膜晶体管 (TFT) 中的电荷传输之间的关系.
- 为了比较使用sol-gel和燃烧化学在低回火温度下制造的In2O3 TFT的性能.
主要方法:
- 通过叶片涂层制造In2O3薄膜,使用sol-gel和乙酸燃烧辅助化学物质.
- 在不同温度下 (200°C至225°C及以上) 制膜,以研究结构演变.
- 薄膜结构的表征,包括晶度和金属-氧-金属 (M-O-M) 格子含量.
- 制造的n型TFT的电特性,以确定电子的移动性.
主要成果:
- 在200-225°C冷的sol-gel衍生的In2O3 TFT显示出电子流动性为 (3.4±1.3) cm2V−1s−1且晶度最小 (M-O-M含量约46%).
- 对于sol-gel薄膜来说,较高的回火温度会使M-O-M含量增加到70%左右,但不会改善移动性.
- 燃烧辅助的In2O3薄膜需要较低的热预算来结晶,但由于颗粒边界和纳米晶体含有,绕过电子活性无形状态,表现较差.
结论:
- 优化低温加工的金属氧化物薄膜需要了解局部秩序 (纳米晶体性) 和连接性 (颗粒边界,无形相) 之间的相互作用.
- 通过控制无形和晶体相之间的平衡,sol-gel化学为在低温下实现功能性In2O3 TFT提供了一个有前途的途径.
- 燃烧方法,虽然减少了热预算,但可以引入不利的结构特征,阻碍在低温下负载运输.
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