应用类似唤醒效应来增强二维铁电场效应晶体管的能力
Jie Cheng1, Jun-Hui Yuan2, Pei Yue Li3
1The State Key Laboratory of Precision Manufacturing for Extreme Service Performance, School of Mechanical and Electrical Engineering, Central South University, Changsha 410073, China.
ACS applied materials & interfaces
|May 7, 2024
概括
研究人员在2D CuInP2S6 (CIPS) 铁电材料中发现了一种"唤醒效应",由铜离子迁移驱动. 这种效应显著提高了铁电场效应晶体管的性能,用于先进的内存和计算.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 传统的铁电场效应晶体管 (FeFET) 需要增强的极化域以提高性能.
- 在二维 (2D) 铁电材料中增强极化场的研究,如CuInP2S6 (CIPS),是有限的.
研究的目的:
- 研究二维CIPS材料中极化场的增强.
- 了解CIPS中极化增强的潜在机制.
- 将这种机制集成到FeFET设备中,以提高功能.
主要方法:
- 将外部循环电压应用于CIPS,以观察极化场变化.
- 用适合2D材料的技术分析了极化增强的机制.
- 制造的石墨烯/CIPS/WSe2 FeFET 设备包含了观察到的效果.
主要成果:
- 在周期电压下,CIPS表现出增强的极化场,类似于散装铁电器.
- 在CIPS中,增强机制被确定为长距离离子迁移,称为"唤醒效应",与缺陷再分配不同.
- 具有唤醒效果的FeFET显示电流开/关比增加了4个数量级,以及更宽的歇斯底里窗口.
结论:
- 由离子迁移驱动的2D CIPS中的"唤醒效应"提供了一种提高FeFET性能的新方法.
- 这种效应可以实现先进的应用,包括多层非挥发性内存 (21 个级别,>10^6 开/关比,>10^3 秒保留) 和神经形态计算 (93% 的手写数字识别精度).
- 这些发现为下一代微纳米电子设备铺平了道路,利用二维铁电.
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