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Updated: Jun 27, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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与P型单层WSe2的低电阻接触

Jingxu Xie1,2,3, Zuocheng Zhang1, Haodong Zhang1

  • 1Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States.

Nano letters
|May 7, 2024
PubMed
概括

研究人员使用WSe2/α-RuCl3异构开发了一种新的兴奋剂策略,以显著降低二维 (2D) 半导体晶体管中的接触电阻. 这一突破使得高性能p型单层WSe2场效应晶体管 (FET) 成为可能.

关键词:
转移费用 转移费用 转移费用 转移费用欧姆电位接触器的接触在p型单层WSe2 FET中.第三种类型的带调整.α-RuCl3 是一个体.

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