滑动铁电半导体中的原子水平极化反转
Fengrui Sui1, Haoyang Li1, Ruijuan Qi2,3
1Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
Nature communications
|May 7, 2024
概括
这项研究追踪了以为的γ-InSe中原子层间层的滑动,揭示了极化反转. 电子束照明驱动滑动,这表明新型电子设备的切换障碍较低.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 范德瓦尔斯 (vdW) 材料中的滑动电子学和莫雷超级晶圆显示出前景.
- 在现场跟踪原子层间层滑动和极化逆转仍然是一个挑战.
研究的目的:
- 在现场追踪原子层间层滑动和极化逆转在vdW层的以为的γ-InSe.Se中.
- 为了研究电子束诱导的滑动的机制和切换障碍.
主要方法:
- 在现场传输电子显微镜观察原子级动态.
- 实时跟踪层间滑动和偏振变化.
主要成果:
- 直接观察1/3单元细胞间层沿着扶手椅方向滑动,以添加的γ-InSe.
- 滑动对应于垂直偏振逆转,由低能电子束照明驱动.
- 提出了一种新的滑动机制,涉及到同时运动的双层单元.
结论:
- 原子尺度间层滑动是铁电材料中极化逆转的可行途径.
- 低开关障碍表明了低功耗电子应用的潜力.
- 为开发用于非挥发性存储器和晶体管的滑动铁电提供了基础的见解.
相关概念视频
Dielectric Polarization in a Capacitor
4.7K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
4.7K
Biasing of Metal-Semiconductor Junctions
252
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
252
Potential Due to a Polarized Object
397
A neutral atom consists of a positively charged nucleus surrounded by a negatively charged electron cloud. When placed in an external electric field, the external electric force pulls the electrons and nucleus apart, opposite to the intrinsic attraction between the nucleus and the electrons. The opposing forces balance each other with a slight shift between the center of masses of the nucleus and the electron cloud, resulting in a polarized atom. On the other hand, a few molecules, like water,...
397
Fermi Level Dynamics
243
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
243
Ferromagnetism
2.4K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.4K
Induced Electric Dipoles
4.2K
A permanent electric dipole orients itself along an external electric field. This rotation can be quantified by defining the potential energy because the external torque does work in rotating it. Then, the potential energy is minimum at the parallel configuration and maximum at the antiparallel configuration. While the former is a stable equilibrium, the latter is an unstable equilibrium.
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
4.2K


