Fe(Te,Se) /Bi4Te3

An-Hsi Chen1, Qiangsheng Lu1, Eitan Hershkovitz2

  • 1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.

概括

研究人员通过将Fe(Te,Se) 薄膜与拓绝缘体Bi4Te3.3接口,增强了其超导性. 这种方法显著增加了超导过渡温度 (Tc),为先进的量子计算应用铺平了道路.