在P3氧化物阴极中实现结构完整性的界面脊柱局部互锁策略
Jia-Yang Li1, Hai-Yan Hu2,3, Hong-Wei Li3
1Institute for Superconducting and Electronic Materials Australian Institute for Innovative Materials University of Wollongong Innovation Campus, Squires Way, North Wollongong, NSW 2522, Australia.
ACS nano
|May 8, 2024
概括
P3层过渡氧化物阴极对离子电池有希望,但很快降解. 开发了一种界面旋互锁策略,以防止溶解和结构崩,显著提高循环性能.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 储能 储能 储能 储能 储能 储能
背景情况:
- P3层过渡氧化物阴极具有高容量和快速的离子动力学,但受到容量降低的影响.
- 关键的故障机制包括溶解,迁移和不可逆转的相位过渡,导致结构崩.
研究的目的:
- 为了研究P3阴极的故障机制.
- 开发一个接口工程策略,以提高离子电池的P3阴极的稳定性和循环性能.
主要方法:
- 系统地调查P3阴极故障机制.
- 开发和应用一个使用P3/spinel交生长氧化物的接口旋局部相互锁定策略.
- 使用深度蚀刻X射线光电子光谱学,X射线吸收光谱学和基于现场同步子的X射线衍射进行验证.
主要成果:
- 拟议的界面旋局部互锁策略有效地抑制了的迁移,并保持了局部结构.
- 与传统的P3阴极相比,P3/spinel间生长氧化物阴极表现出增强的循环性能.
- 该战略缓解了不可逆转的P3-O3'阶段过渡和结构崩.
结论:
- 接口旋局部互锁工程是开发用于离子电池的稳定和高性能阴极材料的有希望的策略.
- 这种方法解决了P3层过渡氧化物中关键的降解问题.
- 进一步开发这些策略可以加速离子电池的实际应用.
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