用于批量制造的坦光子集成电路
Chengli Wang1,2,3, Zihan Li2,3, Johann Riemensberger2,3
1National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.
Nature
|May 8, 2024
概括
坦酸 (LiTaO3) 光子集成电路 (PIC) 提供了一个低成本,可扩展的替代酸 (LiNbO3) PIC. 这项研究展示了新一代电光应用的高性能LiTaO3 PIC.
科学领域:
- 材料科学
- 光子学
- 电气工程
背景情况:
- 使用酸 (LiNbO3) 的光电集成电路 (PIC) 提供了高性能,但由于成本高,晶圆尺寸小而受到限制.
- 不同于在绝缘体 (SOI) 光子学,LINbO3 PIC缺乏大量应用,这阻碍了其广泛的工业化应用.
- 现有的5G过器商业使用LiTaO3表明可扩展,具有成本效益的制造潜力.
研究的目的:
- 作为低损耗可扩展光子集成电路 (PIC) 的可行材料,研究坦 (LiTaO3).
- 证明基于LiTaO3的PIC的性能,包括调节器及其适用于先进的应用.
- 建立 LiTaO3 作为 LiNbO3 的一个具有成本效益的替代品,用于下一代电光 PIC.
主要方法:
- 使用基于LiTaO3的深紫外线 (DUV) 步进制造工艺制造低损耗PIC.
- 包括损耗测量 (5.6 dB/m) 在内的LiTaO3 PIC的表征.
- 一个 LiTaO3 马赫-Zehnder 调制器 (MZM) 的演示,半波电压长为 1.9 V cm,电光带宽为 40 GHz.
主要成果:
- 使用DUV步进制造实现了低损耗 (5.6dB/m) 的LiTaO3 PIC.
- 展示了一种具有竞争力的1.9 V cm VπL产品和40 GHz带宽的LiTaO3 MZM.
- LiTaO3比LiNbO3具有较低的双断率,使得高密度电路和跨电信频段的宽带运行成为可能.
- 氧3平台支持单离子微生成.
结论:
- 坦酸 (LiTaO3) 是制造低成本,高性能光电集成电路 (PIC) 的有前途的材料.
- 可扩展的DUV步进制造工艺可实现成本高效的LiTaO3 PIC的生产.
- 与LiNbO3相比,LiTaO3 PIC具有优势,包括较低的双折射率和适用于从数据中心到人工智能加速器的各种应用.
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