单层石墨烯中可控制的缺陷是由和等离子体引起的
Xianlei Huang1, Zihao Wan1, Guowen Yuan1
1National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China.
概括
等离子处理可控地在石墨烯中引入三种缺陷类型,使可调节的带隙和半导体特性成为可能. 这项研究促进了石墨烯在半导体行业的应用.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 石墨烯独特的蜂sp2碳网格和迪拉克半金属带结构提供了特殊的性能.
- 缺少内在带隙阻碍了石墨烯的半导体应用.
- 引入缺陷是设计石墨烯电子特性的一个关键策略.
研究的目的:
- 使用等离子体可控地诱导和表征不同类型的石墨烯缺陷.
- 研究这些缺陷对石墨烯带结构和电子行为的影响.
- 探索缺陷工程石墨烯在半导体应用中的潜力.
主要方法:
- 使用具有不同参数和气的 (H2) 和 (Ar) 等离子体.
- 通过等离子体功率和辐射时间精确控制缺陷密度.
- 使用形态学,光谱学和电气特性来分析缺陷进化.
主要成果:
- 成功诱导化石墨烯,石墨烯纳米网和石墨烯与空缺.
- 在化石墨烯中观察到~20 meV的带隙.
- 在石墨烯纳米网和石墨烯有空位中展示了半导体开/关行为.
结论:
- 等离子处理为石墨烯的缺陷工程提供了一种可控的方法.
- 裁剪缺陷可以打开带隙,并诱导石墨烯的半导体特性.
- 这项工作促进了石墨烯在半导体行业的使用.
相关概念视频
Metal-Semiconductor Junctions
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
The Electrical Double Layer
In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...
Imperfections in Crystal Structure: Point, Line and Plane Defects
A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
Imperfections in Crystal Structure: Stoichiometric Point Defects
Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
Imperfections in Crystal Structure: Non-Stoichiometric Defects
Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...


