不易挥发的光学相位变化在铁电哈夫氧化氧化物中
Kazuma Taki1, Naoki Sekine1, Kouhei Watanabe1
1Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
Nature communications
|May 9, 2024
概括
铁电 hafnium氧化物 (Hf0.5Zr0.5O2) 证明了用于光子的非挥发性光学相移. 这种材料在原始设备中显示出独特的,不可逆转的相位转移,为新的光子电路铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 光子学 是一个光子学.
- 电气工程 电气工程
背景情况:
- 非挥发性光学相变器对于可编程光子集成电路 (PIC) 是至关重要的.
- 像BaTiO3这样的铁电材料提供相位转移功能,但缺乏CMOS兼容性.
- 氧化 (Hf0.5Zr0.5O2) 是一种CMOS兼容的铁电材料,具有尚未探索的光子应用.
研究的目的:
- 为了研究光子应用的铁电Hf0.5Zr0.5O2的光学相位转移特性.
- 评估Hf0.5Zr0.5O2作为光子学中的非挥发性相位变换器的潜力.
主要方法:
- 使用Hf0.5Zr0.5O2的设备的制造.
- 在应用电场下的1.55微米波长的光学特征.
- 分析折射率变化和非挥发性相移行为.
主要成果:
- 在1.55μm的原始Hf0.5Zr0.5O2装置中观察到折射率的负变化.
- 在原始设备中,不易挥发的相位转移只发生一次,不管电场的方向如何.
- 这种不可逆转的相位移归因于Hf0.5Zr0.5O2膜内的自发偏振.
结论:
- 铁电Hf0.5Zr0.5O2可以诱导光子设备相关的光学相位移.
- 观察到的不可逆转,不可挥发的相位移为特定的光子应用提供了独特的特性.
- 需要进一步的研究来探索和优化Hf0.5Zr0.5O2用于实际的光子集成电路.
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