GaN

Peng Wu1,2,3,4, Jianping Liu1, Fangzhi Li1

  • 1Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.

概括

化 (GaN) 增长中的表面粗性会影响设备的性能. 这项研究将粗的GaN表面与基质的切割误差和生长条件联系起来,揭示了改进电子设备的阶段积分和曲的原因.

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