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Updated: Jun 26, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

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在一个全对全连接的CMOS Ising解决器芯片上的3SAT

Hüsrev Cılasun1, Ziqing Zeng1, Ramprasath S2

  • 1University of Minnesota, Minneapolis, USA.

Scientific reports
|May 10, 2024
PubMed
概括

这项研究解决了新型CMOS Ising硬件芯片上的3SAT问题. 优化的映射和分解策略使解决方案成为可能,比传统方法实现了显著的加速.

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