剩余组合不均质对红外探测器MCT材料性能的影响
Jan Sobieski1,2, Małgorzata Kopytko1, Kacper Matuszelański2
1Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland.
Sensors (Basel, Switzerland)
|May 11, 2024
概括
通过使用交融多层工艺 (IMP) 进行金属有机化学蒸汽沉积 (MOCVD) 培养的HgCdTe层中的残留组成异质性被调查. 增长后回火显著改善了材料特性和光导体性能.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 光电学是指光电子产品.
背景情况:
- HgCdTe对于先进的红外光探测器至关重要.
- 通过MOCVD进行的互扩散多层过程 (IMP) 在HgCdTe异构结构中提供了组成控制.
- 低温IMP MOCVD可以导致残留的组成不均性.
研究的目的:
- 调查IMP种植的HgCdTe的残留异质性.
- 分析这些不均性对材料性能的影响.
- 确定减轻不均性和提高设备性能的方法.
主要方法:
- 高分辨率的二次离子质谱 (SIMS) 检测组合振荡.
- 在高温下增长后回火.
- HgCdTe层的电气和光电特性.
主要成果:
- 在成长的IMP-HgCdTe皮层中,SIMS揭示了显著的组成振荡.
- 在增长温度以上的增长后化使这些振荡最小化.
- 化减少了背景兴奋剂和增加了重组时间.
结论:
- 在IMP-MOCVD HgCdTe中的残留异质性可以通过增长后回火有效地减少.
- 缓解不均性大大提高了HgCdTe光导体的光谱响应.
- 优化化策略是高性能基于HgCdTe的红外探测器的关键.
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