巨大的杂质对Mn3Snn异常霍尔效应的影响
Rikizo Yano1, Shunya Kihara1, Masayasu Yoneda1
1Department of Applied Physics, Nagoya University, Nagoya, Aichi 464-8603, Japan.
The Journal of chemical physics
|May 13, 2024
概括
胡须Mn3Sn晶体在低温下表现出非歇斯底里的异常霍尔效应 (AHE),当被铁磁Mn2-xSn.覆盖时. 这种效应在接口上被诱导,为定制AHE开辟了新的途径. 关键词:Mn3Sn,异常霍尔效应,反铁磁体,接口,磁近距离效应.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 磁力学 磁力学 是一种
背景情况:
- Mn3Sn是一种抗铁磁 (AFM) 材料,因其在室温下异常的霍尔效应 (AHE) 而闻名.
- 在Mn3Sn中的AHE通常在反铁磁阶段由于旋转对齐而表现出歇斯底里.
研究的目的:
- 为了研究由铁磁层修饰的Mn3Sn晶体中的异常霍尔效应 (AHE).
- 探索磁性近距离效应对Mn3Sn.的AHE和自旋结构的影响.
主要方法:
- 使用流量方法生长胡须Mn3Sn晶体.
- 将Mn3Sn晶体涂上一层薄薄的铁磁Mn2-xSn.
- 对异常霍尔效应的温度依赖测量.
主要成果:
- 涂有Mn2-xSn的Whisker Mn3Sn晶体在中低温 (100-200 K) 时表现出非歇斯底里性AHE.
- 在275K以上,AHE是歇斯底里的,与反向三角格子旋转对齐一致.
- 在100-200K时观察到螺旋式AFM旋转结构,与非歇斯底里AHE相关.
结论:
- 非歇斯底里性AHE在Mn2-xSn和Mn3Sn之间的接口上被诱导.
- 在螺旋AFM阶段的尺度-旋转性,通过磁性近距离效应由Mn2-xSn调节,是AHE的原因.
- 这一发现为使用相邻的磁层控制AHE提供了新的策略.
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