为高性能二维电子设备量身定制无形化
Cindy Y Chen1, Zheng Sun2, Riccardo Torsi1
1Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA.
Nature communications
|May 13, 2024
概括
我们开发了一种低温原子层沉积工艺,在二维材料上制造均无形化 (aBN) 介电膜. 这种可扩展的方法提高了2D电子设备的性能.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 固态物理 固态物理
背景情况:
- 二维 (2D) 材料具有独特的电子和光电子特性,对于下一代设备至关重要.
- 在2D材料设备中实现高性能受到形成均介电层和防止接口缺陷的挑战所阻碍.
- 对介电环境的精确控制对于释放2D材料的全部潜力至关重要.
研究的目的:
- 展示一种可扩展的低温原子层沉积 (ALD) 工艺,用于在二维材料上合成均无形化 (aBN) 薄膜.
- 评估aBN介电层对基于二硫化 (MoS2) 的器件电子和光电子性能的影响.
- 克服当前对二维材料的介电整合方法的局限性.
主要方法:
- 在低温 (<250°C) 下利用原子层沉积 (ALD) 合成无形化 (aBN) 薄膜.
- 采用无种子ALD方法,在2D材料表面上实现均且符合aBN介电层.
- 制造了多个量子井结构和双门单层MoS2场效应晶体管与aBN介电材料.
主要成果:
- 实现了具有高氧化稳定性的均,合规的aBN薄膜的晶圆尺度合成.
- 对于合成的aBN薄膜,其电强度为8.2 MV/cm.
- 展示了aBN介电材料在基于MoS2的设备中的成功集成,使其可评估其光电子和电子性能.
结论:
- 开发的低温,无种子的ALD工艺使2D材料高质量的aBN介电物的可扩展集成成为可能.
- 这一进步解决了介电一体化的关键挑战,为提高二维材料设备性能铺平了道路.
- 这些发现有助于实现下一代二维电子和光子学理论性能极限.
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