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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Screening of Coatings for an All-Solid-State Battery Using In Situ Transmission Electron Microscopy

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Published on: January 20, 2023

氧化接口层使所有固态薄膜电池具有高性能.

Shiping Ma¹, Kaiyuan Wei², Yu Zhao¹

¹Laboratory of Electrochemical Power Sources, Institute of Electronic Engineering, China Academy of Engineering Physics Mianyang Sichuan 621000 P. R. China cuiyanhua@netease.com.

|May 14, 2024

概括

无形氧化 (V₂O₅) 薄膜通过增强界面动力学和抑制侧面反应来改善全固态薄膜电池. 这提高了基于氧化 (LiCoO) 的设备的循环和速率性能.

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科学领域:

材料科学材料科学材料科学
电化学电化学电化学
储能储能储能储能储能储能

背景情况:

氧化 (LiCoO₂) 是所有固态薄膜电池 (TFB) 的关键材料,因为它的能量密度和电压很高.
在LiCoO₂和LiPON电解质之间的接口问题阻碍了TFB的性能,导致副作用和降解.

研究的目的:

研究使用无形氧化 (V₂O₅) 作为基于LiCoO₂的TFB中的接口层.
为了增强接口动力学,抑制副作用反应,并提高这些固态电池的整体性能.

主要方法:

使用磁子喷射制造全固态TFB的制造.
在LiCoO2阴极和LiPON电解质之间加入无形V₂O₅接口层.
界面特性,电化学性能和循环稳定性的表征.

主要成果:

介面层V₂O₅促进了离子运输,并减少了电化学氧化还原极化.
V₂O₅有效地抑制了LiCoO₂和LiPON之间的有害副作用.
优化的5纳米V₂O₅层显著降低了界面电阻 (R_ct),提高了放电能力和增强了循环稳定性 (1000个循环后75.6%的保留率).

结论:

无形V₂O₅作为基于LiCoO₂的TFB的有效接口修饰器.
V₂O₅层增强了离子运输动力学,并减轻了接口降解.
这种方法为开发高性能全固态薄膜电池提供了一个有前途的战略.