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Updated: Jun 26, 2025

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

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在MoSe2/WS2的电场调节型I型到II型频段对齐过渡中,可以调节异构体

Jed Kistner-Morris1, Ao Shi1, Erfu Liu1,2

  • 1Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA.

Nature communications
|May 14, 2024
PubMed
概括

我们展示了MoSe2/WS2异构体中对频段对齐的电控制,在I型和II型状态之间切换. 这使得可调节的层间激发激发发光和新型光电子设备的载体捕获.

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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